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TCAD - Taurus TSUPREM-4
An advanced 1D and 2D process simulator
Taurus TSUPREM-4 is an advanced 1D and 2D process simulator for developing semiconductor process technologies and optimizing their performance. With a comprehensive set of advanced process models, Taurus TSUPREM-4 simulates the process steps used for fabricating semiconductor devices, reducing the need for costly experiments using silicon. In addition, Taurus TSUPREM-4 has extensive stress modeling capabilities, allowing optimization of stress to increase device performance.
Benefits
- Develop cost effective, leading-edge CMOS, bipolar, and power device manufacturing processes
- Predict 1D and 2D device structure characteristics by accurately simulating ion implantation, diffusion, oxidation, silicidation, epitaxy, etching and deposition processing, reducing experimental runs and technology development time
- Analyze stress history in all layers as a result of thermal oxidation, silicidation, thermal mismatch, etching, deposition and stress relaxation
- Study impurity diffusion, including oxidation-enhanced diffusion (OED), transient-enhanced diffusion (TED), interstitial clustering, dopant activation and dose loss