Cloud native EDA tools & pre-optimized hardware platforms
For photodetector incorporation into the silicon photonic infrastructure, a CMOS-compatible material with efficient near-infrared absorption is essential. Germanium, available in standard front-end CMOS processes, is suitable for making photodetectors due to its high absorption at telecom (1.3-1.5) wavelengths. As such, waveguide-integrated Ge photodetectors amenable for integration within the CMOS device layer stack have become a topic of intense R&D.
SiGe Waveguide photodetector
SWB flow. Step 1: structure drawn. Step 2: RSoft optical calculation.
Step 3: TCAD SDevice electrical simulation
Ex and Hy mode profiles
Propagating power and resulting absorption in photodetector, as computed by BeamPROP?
Assefa, Solomon, et al. "CMOS-integrated high-speed MSM germanium waveguide photodetector." Optics Express 18.5 (2010): 4986-4999