Cloud native EDA tools & pre-optimized hardware platforms
S-Litho represents advanced lithography simulation for semiconductor device manufacturing process development and optimization. It covers a wide range of applications in proximity printing, optical, immersion, extreme ultraviolet (EUV), and electron beam (e-beam) lithography. Process-limiting effects within the imaging system of an exposure tool can be thoroughly analyzed, taking the impact of mask and substrate topography on photoresist patterning into account. Interfacing S-Litho with 草榴社区 TCAD tools allows a seamless modeling of complex integration techniques such as double-patterning. The link between S-Litho and 草榴社区 Proteus mask synthesis applications accelerates the generation and validation of optical proximity correction (OPC) models and improves process robustness.
Eliminating costly experiments.
From proximity printing to high-NA EUV Litho.
High predictivity and efficient DP scaling.
S-Litho provides a comprehensive set of features to predict the outcome of a photolithographic process. Physics-based models enable high simulation accuracy. As a computational lithography tool, S-Litho accelerates process development and reduces cost by eliminating experiments.
Key features include:
S-Litho EUV enables process optimization and development for the most advanced nodes. It’s ready for all high-NA EUV specific simulation applications, allowing to start the development of mask synthesis solutions today, while the exposure tool hardware is still under development.
Key features include: